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		<title>BSNL question papers- part-2</title>
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1. Reactive current through the inductive load produces-
a) Magnetic field
b) Electric field
c) Super magnetic field
d) None
2. When a piece of copper and another of germanium are cooled from room temperature to 800 K then the resistance of -
a) each of them increases
b) each of them decreases
c) copper increases and germanium decreases
d) copper decreases and germanium [...]<img alt="" border="0" src="http://stats.wordpress.com/b.gif?host=vinsten.wordpress.com&blog=4402812&post=501&subd=vinsten&ref=&feed=1" />]]></description>
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<div class="snap_preview">
<p>1. Reactive current through the inductive load produces-<br />
a) Magnetic field<br />
b) Electric field<br />
c) Super magnetic field<br />
d) None</p>
<p>2. When a piece of copper and another of germanium are cooled from room temperature to 800 K then the resistance of -<br />
a) each of them increases<br />
b) each of them decreases<br />
c) copper increases and germanium decreases<br />
d) copper decreases and germanium increases</p>
<p>3. A capacitance transducer has two plates of area 5 cm2 each separated by an air gap of 2mm. Displacement sensitivity in pF /cm due to gap change would be -<br />
a) 11.1<br />
b) 44.2<br />
c) 52.3<br />
d) 66.3</p>
<p>4. The critical angle in degrees, for an electromagnetic wave passing from Quartz (m = m0, Î=4Îo) into air is-<br />
a) 15<br />
b)30<br />
c)45<br />
d)90</p>
<p>5. When an RC driving point impedance function has zeros at s= -2 and s=-5 then the admissible poles for the function would be –<br />
a) s = 0; s = -6<br />
b) s = -1; s = -3<br />
c) s = 0; s = -1<br />
d) s = -3; s = -4</p>
<p>6. A capacitor used for power factor correction in single- phase circuit decreases –<br />
a) the power factor<br />
b) the line current<br />
c) Both the line current and the power factor<br />
d) the line current and increases power factor</p>
<p>7. The unit of inductance is –<br />
a) ohm<br />
b) inductive reactance<br />
c) inducta<br />
d) Henry</p>
<p>8. Which type of by-pass capacitor works best at high frequencies –<br />
a) electrolytic<br />
b) mica<br />
c) ceramic<br />
d) plexiglass</p>
<p>9. The usual value of the surge impedance of a telephone line is –<br />
a) 600 W<br />
b) 500 W<br />
c) 75 W<br />
d) none</p>
<p>10. Telemetering is a method of –<br />
a) counting pulses, sent over long distances<br />
b) transmitting pictures from one place to another<br />
c) transmitting information concerning a process over a distance<br />
d) None</p>
<p>11. In an unbiased P-N junction thickness of depletion layer is of the order of –<br />
a) 0.005 mm<br />
b) 0.5 mm<br />
c) 5 mm<br />
d) 10-10 m</p>
<p>12.  One of the semiconductor device, which behaves like two SCRs is–<br />
a) UJT<br />
b)  triac<br />
c) JFET<br />
d) MOSFET</p>
<p>13. The following, which is not an advantage of semiconductor strain gauges as compared to conventional strain gauges, is –<br />
a) excellent hysterists characteristics<br />
b) least sensitive to temperature changes<br />
c) high fatigue life<br />
d) smaller size</p>
<p>14. The fundamental ripple frequency of a half wave 3F rectifier with a 3F supply of frequency 50 Hz is –<br />
a)150 Hz<br />
b) 50 Hz<br />
c) 100 Hz<br />
d) 250 Hz.</p>
<p>15. For an FR biased PNP transistor –<br />
a) base is negative with respect to emitter<br />
b) collector is positive with respect to emitter<br />
c) collector is a little more positive than base<br />
d) base is a little less positive with respect to emitter than collector</p>
<p>16. With normal operation of a JFET one can get IDss –<br />
a) the maximum drain current<br />
b) the minimum drain current<br />
c) normal drain current<br />
d) none</p>
<p>17. An SCR is a semiconductor device made up of –<br />
a) Four N type layers<br />
b) Two P types and three N type layers<br />
c) Two P type and two N type layers<br />
d) Three P type and one N type layers</p>
<p>18. As the drain voltage is increased for a junction FET in the pinch off region then the drain current –<br />
a) becomes zero<br />
b) abruptly decreases<br />
c) abruptly increases<br />
d) remains constant</p>
<p>20. When the energy gap of a semiconductor is 1.1eV then it would be –<br />
a) opaque to the visible light<br />
b) transparent to the visible light<br />
c) transparent to the infrared radiation<br />
d) opaque to the infrared radiation</p>
<p><a href="http://fearlessfalgons.blogspot.com/2009/04/bsnl-question-papers-part-2.html" target="_blank"><strong>Click here for ANSWERS</strong></a></div>
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